a Electron concentration the along the uniform nanowire. b
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Parallel algorithms for the simulation and visualisation of
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Materials Free Full Text Quantum Transport in a Silicon
Materials Free Full Text Quantum Transport in a Silicon
Materials Free Full Text Quantum Transport in a Silicon
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Materials Free Full Text Quantum Transport in a Silicon
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The I D V G characteristics of the four devices see fig. 5 using
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a Potential along the center of the uniform nanowire at different
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The potential landscape at V G 1.5 V for the four arrangements
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